SPECIAL ISSUE ON QUATERNARY COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES: SOURCES AND DETECTORSSTILLMAN GE.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 117Article

GALLIUM ARSENIDE AND RELATED COMPOUNDS, 1982. PAPERS FROM THE TENTH INTERNATIONAL SYMPOSIUM ON GALLIUM ARSENIDE AND RELATED COMPOUNDS HELD AT ALBUQUERQUE, NEW MEXICO, USA, 19-22 SEPTEMBER 1982STILLMAN GE ED.1982; CONFERENCE SERIES - INSTITUTE OF PHYSICS; ISSN 0305-2346; GBR; DA. 1982 PUBL. 1983; NO 65; XVII-650 P.; BIBL. DISSEM.Conference Paper

SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS.WOLFE CM; STILLMAN GE.1975; PHYS. APPL. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 10; PP. 564-567; BIBL. 30 REF.Article

ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS.STILLMAN GE; WOLFE CM.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 1-2; PP. 69-88; BIBL. 1 P.Article

EFFECT OF SURFACE STATES ON THE AMPHOTERIC BEHAVIOR OF SN IN VAPOR EPITAXIAL GAASWOLFE CM; STILLMAN GE.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 4; PP. 283-285; ABS. ALLEM.; BIBL. 12 REF.Serial Issue

ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTSCOOK LW; BULMAN GE; STILLMAN GE et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 589-591; BIBL. 7 REF.Article

AN ANALYSIS OF THE PERFORMANCE OF HETEROJUNCTION PHOTOTRANSISTORS FOR FIBER OPTIC COMMUNICATIONSMILANO RA; DAPKUS PD; STILLMAN GE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 266-274; BIBL. 42 REF.Article

SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURESSHICHIJO H; HESS K; STILLMAN GE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 2; PP. 89-91; BIBL. 21 REF.Article

TEMPERATURE DEPENDENT ELECTRON VELOCITY-FIELD CHARACTERISTICS FOR IN_0.53GA_0.47AS AT HIGH ELECTRIC FIELDSWINDHORN TH; COOK LW; STILLMAN GE et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 6; PP. 1065-1082; BIBL. 33 REF.Article

WAVE INTERPRETATION OF NL PRODUCT IN GUNN INSTABILITYLAI HH; BONG HO; STILLMAN GE et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 2; PP. 493-498; ABS. GER; BIBL. 6 REF.Article

MINORITY CARRIER DIFFUSION LENGTHS IN LIQUID PHASE EPITAXIAL INGAASP AND INGAASTASHIMA MM; COOK LW; STILLMAN GE et al.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 831-846; BIBL. 15 REF.Article

VARIATION OF THE THICKNESS AND COMPOSITION OF LPE INGAASP, INGAAS, AND INP LAYERS GROWN FROM A FINITE MELT BY THE STEPCOOLING TECHNIQUECOOK LW; TASHIMA MM; STILLMAN GE et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 1; PP. 119-140; BIBL. 10 REF.Article

ORIENTATION DEPENDENCE OF BALLISTIC ELECTRON TRANSPORT AND IMPACT IONISATIONSHICHIJO H; HESS K; STILLMAN GE et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 6; PP. 208-210; BIBL. 6 REF.Article

ROOM-TEMPERATURE ELECTRON DIFFUSION LENGTHS IN LIQUID PHASE EPITAXIAL INGAASP AND INGAASTASHIMA MM; COOK LW; STILLMAN GE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 12; PP. 960-961; BIBL. 10 REF.Article

EFFECTS OF A FINITE MELT ON THE THICKNESS AND COMPOSITION OF LIQUID PHASE EPITAXIAL IN INGAASP AND INGAAS LAYERS GROWN BY THE DIFFUSION-LIMITED STEP-COOLING TECHNIQUECOOK LW; TASHIMA MM; STILLMAN GE et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 11; PP. 904-907; BIBL. 5 REF.Article

COMPOUND SEMICONDUCTORSHOLONYAK N JR; STILLMAN GE; WOLFE CM et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 12; PP. 487C-499C; BIBL. 128 REF.Article

EPITAXIAL GROWTH OF IN_XGA_1-XAS WAVEGUIDE DETECTORS FOR INTEGRATED OPTICS.WOLFE CM; STILLMAN GE; MELNGAILIS I et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 11; PP. 1506-1509; BIBL. 16 REF.Article

ELECTROABSORPTION PRODUCED MIXED INJECTION AND ITS EFFECT ON THE DETERMINATION OF IONIZATION COEFFICIENTSBULMAN GE; COOK LW; STILLMAN GE et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1189-1200; 11 P.; BIBL. 21 REF.Article

HIGH-FIELD ELECTRON TRANSPORT IN IN_XGA_1-XAS_YP_1-Y (LAMBDA G=1.2MU M)WINDHORN TH; COOK LW; STILLMAN GE et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1065-1067; BIBL. 15 REF.Article

THE EFFECT OF LATTICE MISMATCH ON HOLE DIFFUSION LENGTHS IN LIQUID PHASE EPITAXIAL INGAASP (LAMBDA _G=1.15 MU M)/INPTASHIMA MM; COOK LW; TABATABAIE N et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1009-1011; BIBL. 6 REF.Article

LIQUID-PHASE EPITAXIAL GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR THE 1.15-1.31-MU M SPECTRAL REGION.FENG M; WINDHORN TH; TASHIMA MM et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 758-761; BIBL. 18 REF.Article

AUGER PROFILE STUDY OF THE INFLUENCE OF LATTICE MISMATCH ON THE LPE INGAASP-INP HETEROJUNCTION INTERFACEFENG M; COOK LW; TASHIMA MM et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 697-699; BIBL. 15 REF.Article

HIGH FIELD TEMPERATURE DEPENDENT ELECTRON DRIFT VELOCITIES IN GAASWINDHORN TH; ROTH TJ; ZINKIEWICZ LM et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 513-515; BIBL. 6 REF.Article

INTERFACE GRADING IN INGAASP LIQUID PHASE EPITAXIAL HETEROSTRUCTURESCOOK LM; FENG M; TASHIMA MM et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 2; PP. 173-175; BIBL. 9 REF.Article

LATTICE CONSTANT, BANDGAP, THICKNESS, AND SURFACE MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP COOLING, EQUILIBRIUM-COOLING SUPERCOOLING AND TWO-PHASE-SOLUTION GROWTH TECHNIQUESFENG M; COOK LW; TASHIMA MM et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 241-280; BIBL. 36 REF.Article